21.04.10

Within the EU-funded project „GRAND – Graphene-based Nanoelectronic Devices“ researchers at AMO GmbH demonstrated a graphene based field effect transistor working at room temperature.

By using a bilayer graphene nanoribbon with top and back gate electrode the researchers realized a transistor with high carrier mobility and high on/off ratio even at room temperature. This new transistor, due to its universal properties internally called “Wolpertinger”, shows a carrier mobility of 1000 cm²/Vs at an on/off ratio of 80 and is therefore opening new routes for graphene based high-speed electronic and opto-electronic devices.    

This work was recently published in the renowned journal Applied Physics Letters and belongs to the “20 top-most downloaded papers” at Applied Physics Letters in March 2010.

B.Szafranek, D. Schall, M. Otto, D. Neumaier, and H. Kurz Applied Physics Letters 96, 112103 (2010). doi:10.1063/1.3364139

---